Variation in SEU sensitivity of dose-imprinted CMOS SRAMs

Conference · Fri Dec 01 00:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:6997744

Stassinopoulos, E G ^[1]; Brucker, G S ^[2]; Van Gunten, O ^[3]; Kim, H S ^[4]

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1. NASA/Goddard Space Flight Center, Greenbelt, MD (US)
2. GE Astro-Space Div., Princeton, NJ (US)
3. Lab. for Physical Sciences, College Park, MD (US)
4. Science System and Applications, Inc., Seabrook, MD (US)

This paper reports on an experimental study of dose-induced changes in SEU sensitivity of CMOS static RAMs. Two time-regimes were investigated following exposure of memories to Cobalt-60 gamma rays: the near term within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze-in the damage state until SEU measurements could be made before annealing would take place. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46% and asymptotic cross sections increased by factors of 2 to 4 (unannealed samples).

• OSTI ID: 6997744
• Report Number(s): CONF-890723-; CODEN: IETNA; TRN: 90-014110
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
INTEGRATED CIRCUITS
RADIOSENSITIVITY
MEMORY DEVICES
RADIATION HARDENING
MOS TRANSISTORS
ANNEALING
ASYMPTOTIC SOLUTIONS
COBALT 60
CROSS SECTIONS
ENVIRONMENTAL EXPOSURE PATHWAY
EXPERIMENTAL DATA
GAMMA RADIATION
HEAVY IONS
INTERACTIONS
ION BEAMS
LET
NITROGEN
RADIATION DOSES
TEMPERATURE EFFECTS
BEAMS
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHARGED PARTICLES
COBALT ISOTOPES
DATA
DOSES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY TRANSFER
HARDENING
HEAT TREATMENTS
INFORMATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
NONMETALS
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TRANSISTORS
YEARS LIVING RADIOISOT
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments
640301 - Atomic
Molecular & Chemical Physics- Beams & their Reactions
657000 - Theoretical & Mathematical Physics