High power AlGaAs-GaAs visible diode lasers
- Univ. of Connecticut, Storrs, CT (United States). Dept. of Electrical Engineering
- Epi Materials Ltd., Cambridgeshire (United Kingdom)
- Polaroid Corp., Cambridge, MA (United States). Microelectronics and Materials Center
A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime ([approx equal]715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 [mu]m in width with a centerline separation of 9 [mu]m. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10 C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in.
- OSTI ID:
- 6982337
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 6:7; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
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SEMICONDUCTOR LASERS
DESIGN
PERFORMANCE
ALUMINIUM ARSENIDES
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
LASER RADIATION
THRESHOLD CURRENT
VISIBLE SPECTRA
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
JUNCTIONS
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PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
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426002* - Engineering- Lasers & Masers- (1990-)