Orientation-dependent perimeter recombination in GaAs diodes

Journal Article · Mon Apr 23 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103108· OSTI ID:6944346

Stellwag, T B; Melloch, M R; Lundstrom, M S; Carpenter, M S; Pierret, R F ^[1]

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1. School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (USA)

Perimeter recombination currents affect the performance of GaAs-based devices such as solar cells, heterojunction bipolar transistors, and injection lasers. We report that the {ital n}{congruent}2 perimeter recombination current has a strong orientation dependence. More than a factor of five variation in the surface recombination current at mesa-etched edges has been observed. These results suggest that with proper device design, perimeter recombination currents could be substantially reduced.

• OSTI ID: 6944346
• Journal Information: Applied Physics Letters; (USA), Vol. 56:17; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
JUNCTION DIODES
FABRICATION
CHEMICAL VAPOR DEPOSITION
DESIGN
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE COATING
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360603 - Materials- Properties