Effects of heavy impurity doping on electron injection in p/sup +/-n GaAs diodes

Journal Article · Mon Jun 27 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99529· OSTI ID:5081122

Klausmeier-Brown, M E; Lundstrom, M S; Melloch, M R; Tobin, S P

Measurements of electron injection currents in p/sup +/-n diodes are presented for a range of p-type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (n/sub o/D/sub n/). Measurements are presented for Zn-doped GaAs solar cells with p-layer hole concentrations in the range 6.3 x 10/sup 17/-1.3 x 10/sup 19/ cm/sup -3/. The results demonstrate that so-called band-gap narrowing effects substantially increase the injected electron current in heavily doped p-type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure bipolar transistors.

• Research Organization: School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
• OSTI ID: 5081122
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:26
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
42 ENGINEERING
GALLIUM ARSENIDE SOLAR CELLS
CRYSTAL DOPING
ELECTRIC CURRENTS
SEMICONDUCTOR DIODES
DESIGN
ETCHING
EXPERIMENTAL DATA
FABRICATION
IMPURITIES
MATHEMATICAL MODELS
P-N JUNCTIONS
CURRENTS
DATA
DIRECT ENERGY CONVERTERS
EQUIPMENT
INFORMATION
JUNCTIONS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE FINISHING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360603 - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)