CMOS/SOS 4k Rams hardened to 100 Krads (s:)

Journal Article · Wed Dec 01 00:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336433· OSTI ID:5964303

Napoli, L S; Heagerty, W F; Smeltzer, R K; Yeh, J L

Two CMOS/SOS 4K memories were fabricated with a recently developed, hardened SOS process. Memory functionality after radiation doses well in excess of 100 Krads(Si) was demonstrated. The critical device processing steps were identified. The radiationinduced failure mode of the memories is understood in terms of the circuit organization and the radiation behavior of the individual transistors in the memories.

• Research Organization: RCA Labs, Princeton, NJ 08540
• OSTI ID: 5964303
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 29:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MEMORY DEVICES
FABRICATION
HARDENING
RADIATION EFFECTS
ELECTRONIC CIRCUITS
FAILURES
MOS TRANSISTORS
RADIATION DOSES
TRANSISTORS
DOSES
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems