Control of photoluminescence from porous silicon
Visible light emission from silicon has until recently been thought to be negligible. Although hydrogenated amorphous Si (1) and polysilane based alloys (2) had been known to emit light, crystalline Si has an indirect bandgap which allows only for phonon-assisted radiative bandgap-transitions which are highly inefficient and produce light outside the visible range ({approx} 400 to 800 nm). Current work on porous Si (3) and thin films of Si (4) microcrystallites (2--5 nm diameter) have demonstrated photoluminescence (PL) from infra-red to green. In order to make this new physical phenomenon compatible with conventional integrated circuit technology, a method is needed to control and pattern light emitting regions of this Si-based material. This paper will demonstrate the use of ion irradiation to controllably reduce the emission of red light from porous silicon. In addition, the behavior of the PL intensity at room temperature as a function of incident-light energy and intensity will be examined. Finally, the effects on PL of annealing treatments to recover ion-beam change will be discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5831957
- Report Number(s):
- SAND-91-2878C; CONF-920188-1; ON: DE92008020
- Resource Relation:
- Conference: 1992 workshop on atoms and clusters, Atami (Japan), 8-10 Jan 1992
- Country of Publication:
- United States
- Language:
- English
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