Total dose and dose rate radiation characterization of EPI-CMOS radiation hardened memory and microprocessor devices

Journal Article · Sat Dec 01 00:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333506· OSTI ID:5619835

Gingerich, B L; Hermsen, J M; Lee, J C; Schroeder, J E

The process, circuit discription, and total dose radiation characteristics are presented for two second generation hardened 4K EPI-CMOS RAMs and a first generation 80C85 microprocessor. Total dose radiation performance is presented to 10M rad-Si and effects of biasing and operating conditions are discussed. The dose rate sensitivity of the 4K RAMs is also presented along with single event upset (SEU) test data.

• Research Organization: Harris Semiconductor, P.O. Box 883, Melbourne, FL 32901
• OSTI ID: 5619835
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MICROPROCESSORS
MOS TRANSISTORS
RADIATION HARDENING
SEMICONDUCTOR STORAGE DEVICES
DOSE RATES
ELECTRONIC CIRCUITS
PERFORMANCE
SENSITIVITY
COMPUTERS
HARDENING
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems