Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

Journal Article · Sat Mar 01 00:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118618· OSTI ID:522548

Yamaguchi, M; Okuda, T; Taylor, S J; Takamoto, T ^[1]; Ikeda, E; Kurita, H ^[2]

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1. Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)
2. Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 522548
• Journal Information: Applied Physics Letters, Vol. 70, Issue 12; Other Information: PBD: Mar 1997
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
GALLIUM ARSENIDE SOLAR CELLS
RADIATION EFFECTS
INDIUM PHOSPHIDE SOLAR CELLS
GERMANIUM
ELECTRON BEAMS
MEV RANGE 01-10
ANNEALING
CHARGE CARRIERS