Minority-carrier injection-enhanced annealing of radiation damage to InGaP solar cells

Journal Article · Tue Apr 01 00:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119034· OSTI ID:562897

Yamaguchi, M; Okuda, T; Taylor, S J ^[1]

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1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)

The observation of minority-carrier injection-enhanced annealing of radiation-induced defects in InGaP is reported. 1-MeV electron irradiation results demonstrate superior radiation-resistance of InGa{sub 0.5}P{sub 0.5} solar cells compared to GaAs-on-Ge cells. Moreover, minority-carrier injection under forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP solar cell properties. These results suggest that the radiation-resistance of InGaP-based devices such as InGaP/GaAs(/Ge) multijunction solar cells and InGaP(As) light-emitting devices is further improved under minority-carrier injection condition. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 562897
• Journal Information: Applied Physics Letters, Vol. 70, Issue 16; Other Information: PBD: Apr 1997
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
INDIUM PHOSPHIDE SOLAR CELLS
RADIATION HARDENING
GALLIUM PHOSPHIDE SOLAR CELLS
ANNEALING
ELECTRON BEAMS
MEV RANGE 01-10
CRYSTAL DEFECTS
CHARGE CARRIERS