Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

Journal Article · Sat Mar 01 00:00:00 EST 1997 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-997-0141-5· OSTI ID:484475

Gardner, J A; Rao, M V; Tian, Y L ^[1]; Holland, O W; Roth, E G ^[2]; Chi, P H ^[3]; Ahmad, I ^[4]

---

1. George Mason Univ., Fairfax, VA (United States)
2. Oak Ridge National Lab., TN (United States)
3. National Inst. of Standards and Technology, Gaithersburg, MD (United States)
4. FM Technologies, Fairfax, VA (United States)

Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temperature of the sample at a rate of 200{degree}C/min vs 10{degree}C/min for conventional ceramic furnace annealing. Samples were annealed in the temperature range of 1400-1700{degree}C for 2-10 min. The implanted/annealed samples were characterized using van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the characteristics of the microwave-annealed material are similar to those of conventional furnace anneals despite the difference in cycle time. 19 refs., 7 figs., 3 tabs.

• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76OR00033; AC05-96OR22464
• OSTI ID: 484475
• Journal Information: Journal of Electronic Materials, Vol. 26, Issue 3; Other Information: PBD: Mar 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SILICON CARBIDES
ION IMPLANTATION
ANNEALING
RUTHERFORD SCATTERING
NITROGEN
PHOSPHORUS
ALUMINIUM
BACKSCATTERING
MASS SPECTROMETERS
TEMPERATURE DEPENDENCE
MICROWAVE EQUIPMENT
ELECTRICAL PROPERTIES
NUMERICAL DATA