Effects of nitrogen plasma treatment on the electrical property and band structure of few-layer MoS{sub 2}

Journal Article · Mon Jan 18 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939978· OSTI ID:22489325

Su, Ting-Hong; Lin, Yow-Jon ^[1]

---

1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)

Few-layer MoS{sub 2} prepared by the chemical vapor deposition method was treated with nitrogen plasma under different radio-frequency (rf) power conditions in order to experimentally study the change in the electrical property. Control of the rf power could change the work function of MoS{sub 2} from 5.40 eV to 5.06 eV. It is shown that the increased rf power leads to the increased (reduced) number of nitrogen (oxygen) atoms, increasing the electron concentration and shifting the Fermi level toward conduction band. The sensitivity of the work function to the rf power provides an opportunity to tune the work function of MoS{sub 2}.

• OSTI ID: 22489325
• Journal Information: Applied Physics Letters, Vol. 108, Issue 3; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
EV RANGE
LAYERS
MOLYBDENUM SULFIDES
NITROGEN
OXYGEN
PLASMA
RADIOWAVE RADIATION
WORK FUNCTIONS