Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films
- Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Analytical Instrumentation Center, College of Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States)
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696 (United States)
- Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{sub 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.
- OSTI ID:
- 22486242
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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