Formation of (111) orientation-controlled ferroelectric orthorhombic HfO{sub 2} thin films from solid phase via annealing

Journal Article · Mon Aug 01 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4960461· OSTI ID:22594326

Mimura, Takanori; Katayama, Kiliha ^[1]; Shimizu, Takao ^[2]; Uchida, Hiroshi ^[3]; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. ^[4]; Sakata, Osami ^[5]; Funakubo, Hiroshi ^[1]

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1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)
2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)
3. Department of Materials and Life Sciences, Sophia University, Tokyo 102-8554 (Japan)
4. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
5. Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan)

0.07YO{sub 1.5}-0.93HfO{sub 2} (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In{sub 2}O{sub 3}(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates, and (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (P{sub r}) of 9.6 and 10.8 μC/cm{sup 2} and coercive fields (E{sub c}) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

• OSTI ID: 22594326
• Journal Information: Applied Physics Letters, Vol. 109, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
DOPED MATERIALS
ENERGY BEAM DEPOSITION
EPITAXY
FERROELECTRIC MATERIALS
GRAIN ORIENTATION
HAFNIUM OXIDES
INDIUM OXIDES
LASER RADIATION
ORTHORHOMBIC LATTICES
POLARIZATION
PULSED IRRADIATION
SILICA
SILICON OXIDES
SUBSTRATES
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION
YTTRIUM OXIDES
ZIRCONIUM OXIDES