Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor

Journal Article · Mon Jul 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926572· OSTI ID:22483155

Tsuchiya, Takashi; Moriyama, Satoshi; Terabe, Kazuya; Aono, Masakazu ^[1]

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1. International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

An all-solid-state electric-double-layer transistor (EDLT) was fabricated for electrical modulation of the superconducting critical temperature (T{sub c}) of Nb film epitaxially grown on α-Al{sub 2}O{sub 3} (0001) single crystal. In an experiment, T{sub c} was modulated from 8.33 to 8.39 K while the gate voltage (V{sub G}) was varied from 2.5 to −2.5 V. The specific difference of T{sub c} for the applied V{sub G} was 12 mK/V, which is larger than that of an EDLT composed of ionic liquid. A T{sub c} enhancement of 300 mK was found at the Li{sub 4}SiO{sub 4}/Nb film interface and is attributed to an increase in density of states near the Fermi level due to lattice constant modulation. This solid electrolyte gating method should enable development of practical superconducting devices highly compatible with other electronic devices.

• OSTI ID: 22483155
• Journal Information: Applied Physics Letters, Vol. 107, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM OXIDES
CRITICAL TEMPERATURE
DENSITY OF STATES
ELECTRIC POTENTIAL
ELECTRONIC EQUIPMENT
EPITAXY
FERMI LEVEL
FILMS
INTERFACES
LATTICE PARAMETERS
LIQUIDS
LITHIUM SILICATES
MODULATION
MONOCRYSTALS
NIOBIUM
SOLID ELECTROLYTES
SOLIDS
SUPERCONDUCTING DEVICES
TRANSISTORS