Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

Journal Article · Thu Jan 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615010157· OSTI ID:22470133

Kukushkin, V. A., E-mail: [e-mail] ^[1]

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1. Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime.

• OSTI ID: 22470133
• Journal Information: Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
EXCITONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LIFETIME
NANOSTRUCTURES
POTENTIALS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THREE-DIMENSIONAL CALCULATIONS
THREE-DIMENSIONAL LATTICES