Admittance spectroscopy of solar cells based on GaPNAs layers
- Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)
Admittance spectroscopy is used to study defect levels in the layers of a GaPNAs quaternary solid solution. Centers with an activation energy of 0.22 eV and a capture cross section of ∼2.4 × 10{sup −15} cm{sup 2} are found in doped n-GaPNAs layers grown on GaP substrates. These centers correspond to already known Si{sub Ga} + V{sub P} defects in n-GaP; annealing decreases their concentration by several times. A level with an activation energy of 0.23–0.24 eV and capture cross section of ∼9.0 × 10{sup −20} cm{sup 2} is found in undoped GaPNAs layers grown on Si and GaP substrates. The concentration of these centers substantially decreases upon annealing, and, at annealing temperatures exceeding 600°C, there is absolutely no response from these defects. For undoped GaPNAs layers grown on GaP substrates, a level with an activation energy of 0.18 eV and capture cross section of ∼1.1 × 10{sup −16} cm{sup 2} is also found. The concentration of these centers remains unchanged upon annealing.
- OSTI ID:
- 22469979
- Journal Information:
- Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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