Deep level transient spectroscopy and admittance spectroscopy of Si{sub 1-x}Ge{sub x}/Si grown by gas-source molecular-beam epitaxy
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Univ. of Michigan, Ann Arbor, MI (United States); and others
Deep levels and measured band discontinuities in Si/SiGe heterostructures grown by gas-source molecular-beam epitaxy have been identified. Hole traps in the p-type, undoped, single layers of Si{sub 1-x}Ge{sub x}(0.05{le}x{le}0.26) have activation energies ranging from 0.029 to 0.45 eV and capture cross sections ({sigma}{sub infinity}) ranging from 10{sup {minus}9} to 10{sup {minus}20} cm{sup 2}. Possible origins of these centers are discussed. It is found from admittance spectroscopy measurements that the band discontinuity is almost entirely in the valence band for 0
- OSTI ID:
- 147036
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; CNN: Grant AFOSR-91-0349; TRN: 95:007540-0044
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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