Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

Journal Article · Sun Dec 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4903318· OSTI ID:22402708

Aho, A.; Korpijärvi, V. -M.; Tukiainen, A.; Puustinen, J.; Guina, M. ^[1]

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1. Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere (Finland)

We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%–6%.

• OSTI ID: 22402708
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
ALLOYS
ENERGY SPECTRA
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NITROGEN
PLASMA
RADIOWAVE RADIATION