High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source
- Photovoltaics and Nanostructures Group, Texas Center for Advanced Materials and Department of Physics, University of Houston, Houston, Texas 77204-5004 (United States)
Nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using a radio-frequency (rf) plasma source as nitrogen precursor was studied as a function of growth conditions. For higher growth temperatures ({approx}460 deg. C), only higher rf power values yield significant incorporation of nitrogen. The nitrogen incorporation exhibits two behaviors with the growth rate: metal-organic-chemical-vapor-deposition and molecular-beam-epitaxy like behaviors at low and high growth rate, respectively. The highest nitrogen compositions are obtained at rates of about 1 {mu}m/h. Despite a significant reduction of the N incorporation with increasing growth temperature, the optimization of the growth conditions allowed us to reach nitrogen concentrations up to 7.1% for samples fabricated at 460 deg. C. Films with higher nitrogen content exhibit low-temperature luminescence at energies higher than those predicted using the band-anticrossing model and an extrapolation of the literature data for smaller N composition.
- OSTI ID:
- 20713988
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 2; Other Information: DOI: 10.1063/1.1996853; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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