Individual identification of free hole and electron dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films by simultaneous monitoring of two optical transitions
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
The photocarrier dynamics of CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valence bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.
- OSTI ID:
- 22398996
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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