Study of the recombination process at crystallite boundaries in CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) films by microwave photoconductivity
- Chang-Gung University, Department of Electronic Engineering and Green Technology Research Center (China)
- Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)
The loss kinetics of photogenerated charge carriers in thin polycrystalline chalcopyrite CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) films has been studied by microwave photoconductivity (at 36 GHz). The films were synthesized using the ampoule method and three variants of physical vapor deposition with subsequent selenization: magnetron sputtering, thermal deposition, and modified thermal deposition with intermetallic precursors. The photoconductivity was excited by 8-ns nitrogen laser pulses with maximum intensity of 4 Multiplication-Sign 10{sup 14} photons/cm per pulse. Measurements were performed in the temperature range 148-293 K. The photoresponse amplitude is found to depend linearly on the sizes of coherent-scattering regions in the film grains, which were calculated from X-ray diffraction data. The photoresponse decay obeys hyperbolic law. The photoresponse half-decay time increases with a decrease in both temperature and light intensity. It is shown that the recombination of free holes with trapped electrons is very efficient near the crystallite boundaries.
- OSTI ID:
- 22105549
- Journal Information:
- Semiconductors, Vol. 47, Issue 3; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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