Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Journal Article · Mon Sep 29 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896679· OSTI ID:22351120

Redaelli, L.; Mukhtarova, A.; Valdueza-Felip, S.; Ajay, A.; Durand, C.; Eymery, J.; Monroy, E. ^[1]; Bougerol, C.; Himwas, C. ^[1]; Faure-Vincent, J. ^[1]

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1. Université Grenoble Alpes, 38000 Grenoble (France)

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In{sub 0.12}Ga{sub 0.88}N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.

• OSTI ID: 22351120
• Journal Information: Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
CATHODOLUMINESCENCE
CONVERSION
CRYSTAL DEFECTS
EFFICIENCY
GALLIUM NITRIDES
INDIUM COMPOUNDS
NANOSTRUCTURES
PHOTOVOLTAIC CELLS
QUANTUM WELLS
RED SHIFT
RELAXATION
SOLAR CELLS
STRAINS
THICKNESS