Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

Journal Article · Mon Apr 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4947445· OSTI ID:22591601

Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca; Durand, Christophe; Monroy, Eva; Eymery, Joël ^[1]; Bougerol, Catherine ^[1]

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1. Université Grenoble Alpes, 38000 Grenoble (France)

We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

• OSTI ID: 22591601
• Journal Information: Applied Physics Letters, Vol. 108, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIERS
CONVERSION
DIFFUSION
DIFFUSION LENGTH
EFFICIENCY
ELECTRIC POTENTIAL
GALLIUM NITRIDES
PERFORMANCE
PHOTOVOLTAIC EFFECT
QUANTUM WELLS
SOLAR CELLS
THICKNESS