Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films
- NTT Basic Research Laboratories, NTT Corporation Atsugi, Kanagawa 243-0198 (Japan)
Transition metal dichalcogenides (TMDs) have emerged as exciting 2D materials beyond graphene due to their promising applications in the field of electronics and optoelectronics. Hence, the ability to produce controllable and uniformly thick TMD sheets over a large area is of utmost important for large-scale applications. Here, a facile method of synthesizing large-area, layer-controlled WS{sub 2}, and MoS{sub 2} sheets by sulfurization of their corresponding thin metal films is reported. A metal film, which is deposited by magnetron sputtering method, can be adjusted to produce, with great control, the desired sheet thickness down to a monolayer. Various characterization techniques, such as Raman, photoluminescence, and transmission electron microscopy, were used to evaluate the grown films. The results confirmed some of the exotic properties of TMDs such as the thickness dependent band-gap transition (indirect to direct band gap) and Raman shift. Devices made directly on the as-grown film showed modest mobility, ranging from 0.005 to 0.01 cm{sup 2} V{sup −1}s{sup −1}. Our synthesis method is simple and could also be used to synthesize other TMDs.
- OSTI ID:
- 22310973
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
FILMS
GRAPHENE
LAYERS
MAGNETRONS
MOBILITY
MOLYBDENUM SULFIDES
PHOTOLUMINESCENCE
RAMAN EFFECT
SPUTTERING
SYNTHESIS
THICKNESS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN SULFIDES