Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 Crystals

Kopaczek, J.; Zelewski, S.; Yumigeta, K.; Sailus, R.; Tongay, S.; Kudrawiec, R.

doi:10.1021/acs.jpcc.2c01044

Title: Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , and WSe ₂ Crystals

Journal Article · Wed Mar 16 00:00:00 EDT 2022 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.2c01044· OSTI ID:1855550

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^[2]; Yumigeta, K. ^[3]; Sailus, R. ^[3];

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Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, 50-370 Wrocław, Poland, Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, 50-370 Wrocław, Poland
Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States

Following the rise of interest in the properties of transition metal dichalcogenides, many experimental techniques were employed to research them. However, the temperature dependencies of optical transitions, especially those related to band nesting, were not analyzed in detail for many of them. Here, we present successful studies utilizing the photoreflectance method, which, due to its derivative and absorption-like character, allows investigating direct optical transitions at the high-symmetry point of the Brillouin zone and band nesting. By studying the mentioned optical transitions with temperature from 20 to 300 K, we tracked changes in the electronic band structure for the common transition metal dichalcogenides (TMDs), namely, MoS₂, MoSe₂, MoTe₂, WS₂, and WSe₂. Moreover, transmission and photoacoustic spectroscopies were also employed to investigate the indirect gap in these crystals. For all observed optical transitions assigned to specific k-points of the Brillouin zone, their temperature dependencies were analyzed using the Varshni relation and Bose–Einstein expression. It was shown that the temperature energy shift for the transition associated with band nesting is smaller when compared with the one at high-symmetry point, revealing reduced average electron–phonon interaction strength.

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Research Organization:: Wroclaw Univ. of Science and Technology (Poland)

Sponsoring Organization:: USDOE

Grant/Contract Number:: DOE-SC0020653; SC0020653

OSTI ID:: 1855550

Alternate ID(s):: OSTI ID: 1860462

Journal Information:: Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Vol. 126 Journal Issue: 12; ISSN 1932-7447

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 Crystals

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Title: Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , and WSe ₂ Crystals