Charge tuning in [111] grown GaAs droplet quantum dots

Journal Article · Mon Aug 25 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4894174· OSTI ID:22310953

Bouet, L.; Vidal, M.; Marie, X.; Amand, T.; Wang, G.; Urbaszek, B. ^[1]; Mano, T.; Ha, N.; Kuroda, T.; Sakoda, K. ^[2]; Durnev, M. V.; Glazov, M. M.; Ivchenko, E. L. ^[3]

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1. INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Ave. Rangueil, 31077 Toulouse (France)
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
3. Ioffe Physical-Technical Institute RAS, 194021 St.-Petersburg (Russian Federation)

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from −3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T = 4 K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25 meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

• OSTI ID: 22310953
• Journal Information: Applied Physics Letters, Vol. 105, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
AMPLITUDES
DROPLETS
ELECTRIC POTENTIAL
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITONS
FINE STRUCTURE
GALLIUM ARSENIDES
GROUND STATES
MAGNETIC FIELDS
MEV RANGE
PHOTOLUMINESCENCE
QUANTUM DOTS
SHELLS
STRAINS
SUBSTRATES
TEMPERATURE RANGE 0000-0013 K
TUNING
VALENCE