Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy

Journal Article · Fri Oct 15 00:00:00 EDT 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1791756· OSTI ID:20662114

Mantovani, V; Sanguinetti, S; Guzzi, M; Grilli, E; Gurioli, M; Watanabe, K; Koguchi, N ^[1]

---

1. INFM and Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milan (Italy)

Low temperature photoluminescence spectroscopy is used to analyze the effects of the Ga coverage and of the postgrowth thermal annealing on the electronic properties of low density ({approx_equal}1x10{sup 9}cm{sup -2}) self-assembled GaAs/AlGaAs quantum dots (QDs) grown by modified droplet epitaxy (MDE). We demonstrate that with the MDE method it is possible to obtain low density and high efficiency QD samples with high photoluminescence efficiency. Large modifications of the photoluminescence band, which depend on Ga coverage and thermal annealing, are found and quantitatively interpreted by means of a simple model based on the Al-Ga interdiffusion.

• OSTI ID: 20662114
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 8; Other Information: DOI: 10.1063/1.1791756; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ANNEALING
CRYSTAL GROWTH
DROPLETS
EFFICIENCY
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY