Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4804180· OSTI ID:22121655

Moetakef, Pouya; Zhang, Jack Y.; Raghavan, Santosh; Kajdos, Adam P.; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California, 93106-5050 (United States)

The conditions for the growth of stoichiometric GdTiO{sub 3} thin films by molecular beam epitaxy (MBE) are investigated. It is shown that relatively high growth temperatures (>750 Degree-Sign C) are required to obtain an MBE growth window in which only the stoichiometric film grows for a range of cation flux ratios. This growth window narrows with increasing film thickness. It is also shown that single-domain films are obtained by the growth on a symmetry-matched substrate. The influence of lattice mismatch strain on the electrical and magnetic characteristics of the GdTiO{sub 3} thin film is investigated.

• OSTI ID: 22121655
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 4; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CATIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
GADOLINIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
STRAINS
TEMPERATURE RANGE 1000-4000 K
THICKNESS
THIN FILMS
TITANATES