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Title: Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4962388· OSTI ID:22594289
; ; ; ;  [1]; ;  [2]
  1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801 (United States)
  2. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)

Requisite to growing stoichiometric perovskite thin films of the solid-solution A′{sub 1-x}A{sub x}BO{sub 3} by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO{sub 3} and ABO{sub 3}, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La{sub 1-x}Sr{sub x}VO{sub 3}, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A′{sub 1-x}A{sub x}BO{sub 3}.

OSTI ID:
22594289
Journal Information:
Applied Physics Letters, Vol. 109, Issue 10; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

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Cited By (5)

Scalable Synthesis of the Transparent Conductive Oxide SrVO 3 journal October 2019
Surface Characterizations and Selective Etching of Sr‐Rich Segregation on Top of SrVO 3 Thin‐Films Grown by Pulsed Laser Deposition journal March 2019
Strong carrier localization in 3d transition metal oxynitride LaVO 3−x N x epitaxial thin films journal January 2017
Exploiting kinetics and thermodynamics to grow phase-pure complex oxides by molecular-beam epitaxy under continuous codeposition journal July 2017
Opportunities in vanadium-based strongly correlated electron systems journal February 2017