Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

Journal Article · Wed Feb 15 00:00:00 EST 2012 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776112010104· OSTI ID:22027929

Brodyn, M S; Lyakhovetskii, V R; Rudenko, V I ^[1]; Puzilkov, V M; Semenov, A V ^[2]

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1. National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)
2. National Academy of Sciences of Ukraine, Institute of Monocrystals (Ukraine)

The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility {chi}{sup (3)}({omega}; {omega}, -{omega}, {omega}) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of {chi}{sup (3)} in bulk silicon carbide single crystals by four orders of magnitude.

• OSTI ID: 22027929
• Journal Information: Journal of Experimental and Theoretical Physics, Vol. 114, Issue 2; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CARBON
CONCENTRATION RATIO
DEPOSITION
FILMS
MAGNETIC SUSCEPTIBILITY
MONOCRYSTALS
NANOSTRUCTURES
NONLINEAR PROBLEMS
PARTICLE SIZE
REFRACTION
SILICON
SILICON CARBIDES
SUBSTRATES
SYNTHESIS
TEMPERATURE DEPENDENCE