Low-temperature production of silicon carbide films of different polytypes

Journal Article · Fri May 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609050273· OSTI ID:21260358

Puzikov, V M; Golubova, E P; Baumer, V N; Dobrotvorskaya, M V ^[1]

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1. National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

The study is concerned with the effect of temperature on the structure of SiC films formed by deposition of the C and Si ions with the energy 120 eV. On the basis of the X-ray structural studies, it is unambiguously established that the structure of the growing polytype is finely dependent on the substrate temperature. In the temperature range from 1080 deg. C to 1510 deg. C, the sequence of films involving the 21R, 51R, 27R, and 6H polytypes is produced for the first time. The effect of temperature on the silicon-carbon atomic content ratio [Si]/[C] in the deposited films is determined. At optimized parameters of deposition the film structured as the 51R rhombohedral polytype is grown.

• OSTI ID: 21260358
• Journal Information: Semiconductors, Vol. 43, Issue 5; Other Information: DOI: 10.1134/S1063782609050273; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
DEPOSITION
EV RANGE 100-1000
FILMS
SILICON
SILICON CARBIDES
SILICON IONS
TEMPERATURE RANGE 1000-4000 K
X RADIATION