Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy

Journal Article · Mon Oct 03 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3645632· OSTI ID:22027764

Klenov, Dmitri O ^[1]; Zide, Joshua M. O. ^[2]

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1. FEI Company, Achtseweg Noord 5, 5600 KA Eindhoven (Netherlands)
2. Materials Science and Engineering, University of Delaware, Newark, Delaware 19716-1501 (United States)

The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.

• OSTI ID: 22027764
• Journal Information: Applied Physics Letters, Vol. 99, Issue 14; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
EPITAXY
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
LAYERS
SEMICONDUCTOR MATERIALS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
X-RAY SPECTROSCOPY