Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well

Journal Article · Sat Nov 15 00:00:00 EST 2014 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774514060108· OSTI ID:22472331

Galiev, G. B. ^[1]; Vasiliev, A. L. ^[2]; Imamov, R. M. ^[3]; Klimov, E. A.; Maltsev, P. P.; Presniakov, M. Yu.; Trunkin, I. N. ^[2]

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1. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
2. National Research Centre “Kurchatov Institute” (Russian Federation)
3. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In{sub 0.53}Ga{sub 0.47}As quantum wells (QWs) on the structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sup 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures with one-sided δ-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between the energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < ħω < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.

• OSTI ID: 22472331
• Journal Information: Crystallography Reports, Vol. 59, Issue 6; Other Information: Copyright (c) 2014 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
CORRELATIONS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EMISSION SPECTROSCOPY
EV RANGE
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
PHOTOLUMINESCENCE
QUANTUM WELLS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY