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Title: Reduction in thermal boundary conductance due to proton implantation in silicon and sapphire

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3592822· OSTI ID:21518470
 [1]; ; ; ;  [1];  [2]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
  2. Sandia National Laboratories, Livermore, California 87123 (United States)

We measure the thermal boundary conductance across Al/Si and Al/Al{sub 2}O{sub 3} interfaces that are subjected to varying doses of proton ion implantation with time domain thermoreflectance. The proton irradiation creates a major reduction in the thermal boundary conductance that is much greater than the corresponding decrease in the thermal conductivities of both the Si and Al{sub 2}O{sub 3} substrates into which the ions were implanted. Specifically, the thermal boundary conductances decrease by over an order of magnitude, indicating that proton irradiation presents a unique method to systematically decrease the thermal boundary conductance at solid interfaces.

OSTI ID:
21518470
Journal Information:
Applied Physics Letters, Vol. 98, Issue 23; Other Information: DOI: 10.1063/1.3592822; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English