The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films
- Department of Chemical and Materials Engineering, University of Idaho, Moscow, Idaho 83844-3024 (United States)
- CRANN, School of Physics, Trinity College Dublin, Dublin 2 (Ireland)
- IPMC, Ecole Polytechnique Federale de Lausanne, Station 3, CH-1015 Lausanne (Switzerland)
- Data and Storage R and D Laboratory, Seocho R and D Campus, LG Electronics, Seoul 137-130 (Korea, Republic of)
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)
We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.
- OSTI ID:
- 21466907
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 8; Other Information: DOI: 10.1063/1.3483232; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition
Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition
Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies
Journal Article
·
Sun May 15 00:00:00 EDT 2011
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:21466907
Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition
Journal Article
·
Thu Jul 15 00:00:00 EDT 2010
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:21466907
Electronic structure of Al-doped ZnO transparent conductive thin films studied by x-ray absorption and emission spectroscopies
Journal Article
·
Tue Nov 15 00:00:00 EST 2011
· Journal of Applied Physics
·
OSTI ID:21466907
+5 more
Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
APPROXIMATIONS
BINDING ENERGY
CONCENTRATION RATIO
COUPLING
CRYSTAL GROWTH
DENSITY FUNCTIONAL METHOD
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
ZINC OXIDES
CALCULATION METHODS
CHALCOGENIDES
DIMENSIONLESS NUMBERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
FILMS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
VARIATIONAL METHODS
ZINC COMPOUNDS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
APPROXIMATIONS
BINDING ENERGY
CONCENTRATION RATIO
COUPLING
CRYSTAL GROWTH
DENSITY FUNCTIONAL METHOD
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS
ZINC OXIDES
CALCULATION METHODS
CHALCOGENIDES
DIMENSIONLESS NUMBERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
FILMS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
VARIATIONAL METHODS
ZINC COMPOUNDS