Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

Journal Article · Sun May 15 00:00:00 EDT 2011 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3554838· OSTI ID:22054033

Yuanjie, Li; Zilong, Liu; Jiangbo, Ren ^[1]

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1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049 (China)

Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 deg. C under 20 Pa O{sub 2} exhibited p-type conductivity with hole concentration of 5x10{sup 17} cm{sup -3} and hole mobility of 0.3 cm{sup 2}/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P-O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites P{sub Zn} and zinc vacancies V{sub Zn} in the P-doped ZnO films.

• OSTI ID: 22054033
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 29, Issue 3; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BINDING ENERGY
CHEMICAL BONDS
DOPED MATERIALS
ELECTRON DENSITY
ENERGY BEAM DEPOSITION
HALL EFFECT
HOLE MOBILITY
LASER RADIATION
OXYGEN
PHOSPHORUS
PULSED IRRADIATION
SAPPHIRE
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC
ZINC OXIDES