Proton effects on low noise and high responsivity silicon-based photodiodes for space environment
- Centre National d'Etudes Spatiales, 18 Avenue E. Belin, 31401 Toulouse Cedex 4 (France)
- IMS Laboratory, University of Bordeaux I-ENSEIRB-CNRS, UMR 5218, 351 Cours de la Liberation, 33405 Talence Cedex (France)
- AdvEOTec, 6/8 Rue de la Closerie, Lisses-ZAC Clos aux Pois, 91052 Evry Cedex (France)
A series of proton irradiations has been carried out on p-n silicon photodiodes for the purpose of assessing the suitability of these devices for the European Galileo space mission. The irradiations were performed at energies of 60, 100, and 150 MeV with proton fluences ranging from 1.7x10{sup 10} to 1x10{sup 11} protons/cm{sup 2}. Dark current, spectral responsivity, and dark current noise were measured before and after each irradiation step. We observed an increase in both dark current, dark current noise, and noise equivalent power and a drop of the spectral responsivity with increasing displacement damage dose. An analytical model has been developed to investigate proton damage effects through the modeling of the electro-optical characteristics of the photodiode. Experimental degradations were successfully explained taking into account the degradation of the minority carrier diffusion length in the N-region of the photodiode. The degradation model was then applied to assess the end-of-life performance of these devices in the framework of the Galileo mission.
- OSTI ID:
- 21185991
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 2; Other Information: DOI: 10.1063/1.3072672; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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