Radiation testing of 2.4 micron wavelength extended InGaAs photodiodes for 100 MeV/n carbon ions
- Discovery Semiconductors, Inc., Ewing Township, NJ (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States). NASA Space Radiation Lab. (NSRL)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
We have successfully tested simultaneously 2.4 Micron Wavelength, Extended InGaAs Photodiodes having diameters of 20, 30, 40, 50, 100, 150, 200, 250, and 290 Micron, coupled with a Single Mode Fiber using 100 MeV/n Carbon (C) Ions up to a cumulative dose of ~40 krad. During irradiation, the devices were maintained at dry ice temperature, reverse biased at 100 mV, and their leakage current was continuously monitored in-situ during the run. After the exposure was completed, all nine devices were monitored for any change in their leakage current at 100 mV and room temperature for several weeks to monitor any annealing effects that may occur. Nine Photodiodes with the above varying diameters were radiated with 100 MeV/n Carbon Ions with a fluence of 106, 107, 108, 109, and 1010 ions/cm2 at each fluence level. At 100 MeV/n the Linear Energy Transfer (LET) of Carbon Ion is ~0.156 MeV-cm2/mg in Extended InGaAs, which is an order magnitude more than Proton (H) and Helium (He) Ions of 100 MeV/n energy. Thus, significant displacement damage is anticipated in the Extended InGaAs Photodiode with 100 MeV/n Carbon Ions with a total fluence of 1 × 1010 ions/cm2 . Pre- and Post- radiation results were also measured for: (1) Leakage Current Vs. Voltage for the Extended InGaAs Photodiodes; (2) Responsivity (Quantum Efficiency) in A/W for Photodiodes; and (3) Bandwidth of the Photodiodes. All devices were found to be fully functional at the normal operating conditions and at both dry ice and room temperature. The leakage current increased up to a factor of ~2X at lower bias of 100 mV at the highest fluence of 1010 ions/cm2, but not significantly at higher bias of 2 V. Finally, we did not observe any post radiation annealing effect for leakage current at room temperature and 100 mV bias for any of the devices after several weeks of data logging.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Nuclear Physics (NP)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1902058
- Report Number(s):
- BNL-223766-2022-JAAM; TRN: US2311167
- Journal Information:
- Proceedings of SPIE (Online), Vol. 12234; Conference: SPIE Optical Engineering + Applications, San Diego, CA (United States), 21-25 Aug 2022; Related Information: Infrared Sensors, Devices, and Applications XII; ISSN 1996-756X
- Publisher:
- SPIECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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