Stability of B-H and B-D complexes in diamond under electron beam excitation

Journal Article · Mon Aug 11 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2965115· OSTI ID:21124071

Barjon, J; Mehdaoui, A; Jomard, F; Chevallier, J ^[1]; Mer, C; Nesladek, M; Bergonzo, P ^[2]; Pernot, J; Omnes, F; Deneuville, A ^[3]

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1. Groupe d'Etude de la Matiere Condensee (GEMaC), Universite Versailles St Quentin, CNRS, 1 place A. Briand, 92195 Meudon cedex (France)
2. CEA, LIST, Diamond Sensor Laboratory, Centre d'Etudes de Saclay, 91191 Gif-sur-Yvette (France)
3. Institut NEEL, CNRS and Universite Joseph Fourier, BP166, 38042 Grenoble Cedex 9 (France)

The substitution of hydrogen by deuterium is generally known to increase the stability of the defect passivation in semiconductors, occasionally giving rise to giant isotope effects. In this work, the stability under an electron beam irradiation of boron-hydrogen and boron-deuterium pairs in diamond are compared. The dissociation kinetics was followed in situ by cathodoluminescence spectroscopy. Surprisingly, B-H complexes are more stable than B-D complexes under electron beam at low temperature ({approx}100 K), with a dissociation rate about twice smaller. These experimental results are coherent with a dissociation mechanism involving a cumulative vibrational excitation of the complexes.

• OSTI ID: 21124071
• Journal Information: Applied Physics Letters, Vol. 93, Issue 6; Other Information: DOI: 10.1063/1.2965115; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON COMPLEXES
CATHODOLUMINESCENCE
DEUTERIUM
DIAMONDS
DISSOCIATION
ELECTRON BEAMS
EPITAXY
EXCITATION
HYDROGEN
HYDROGEN COMPLEXES
ISOTOPE EFFECTS
LAYERS
PASSIVATION
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K