Electron-beam-induced dissociation of B-D complexes in diamond
- Groupe d'Etude de la Matiere Condensee (GEMaC), CNRS-Universite de Versailles St-Quentin-en-Yvelines, 1 place Aristide Briand, 92195 Meudon Cedex (France)
The diffusion of deuterium in boron-doped homoepitaxial diamond films leads to the passivation of boron acceptors via the formation of B-D complexes. In this letter, the stability of B-D pairs is investigated under the stress of a low-energy (10 keV) electron-beam irradiation at low temperature ({approx}100 K). The dissociation of the complexes is evidenced by cathodoluminescence spectroscopy and is shown to result in the reactivation of most acceptors. The dissociation yield per incident electron is found to be strongly dependent on the e-beam current, which suggests a dissociation involving a vibrational excitation of the complexes by hot electrons.
- OSTI ID:
- 20880130
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 23; Other Information: DOI: 10.1063/1.2400201; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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