A GaAs metalorganic vapor phase epitaxy growth process to reduce Ge outdiffusion from the Ge substrate

Journal Article · Mon Apr 14 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2901029· OSTI ID:21101991

Galiana, B; Rey-Stolle, I; Algora, C ^[1]; Volz, K; Stolz, W ^[2]

---

1. Instituto de Energia Solar-UPM, ETSI de Telecomunicacion, Avda. Complutense s/n, Madrid 28040 (Spain)
2. Material Sciences Center (WZMW), Philipps University of Marburg, Marburg 35032 (Germany)

A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer (50 nm) grown at a low temperature ({approx_equal}500 deg. C) on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAs/Ge heterointerface decrease.

• OSTI ID: 21101991
• Journal Information: Applied Physics Letters, Vol. 92, Issue 15; Other Information: DOI: 10.1063/1.2901029; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DIFFUSION BARRIERS
GALLIUM ARSENIDES
GERMANIUM
HETEROJUNCTIONS
LAYERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
VAPOR PHASE EPITAXY