Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
- Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)
Pseudomorphic four-period GaAs{sub 0.978}N{sub 0.022}/GaAs{sub 0.78}Sb{sub 0.22} type-II multiquantum well structures were grown on (100) GaAs substrates by metalorganic vapor phase epitaxy at 530 deg. C. The GaAs{sub 0.978}N{sub 0.022} layers were grown at a V/III ratio of 685 and N/V ratio of 0.96, whereas the GaAs{sub 0.78}Sb{sub 0.22} was grown at a V/III ratio of 3.8 and Sb/V ratio of 0.8. The superlattice peaks in the x-ray diffraction {theta}-2{theta} scans around the (400) GaAs peak were fitted using a dynamical simulation model to determine layer thickness and alloy compositions. The GaAsN and GaAsSb thicknesses were {approx}8 nm and {approx}5 nm, respectively. The photoluminescence (PL) spectra were obtained at 30 K and the PL peak energy was found to match the type-II transition energy obtained from a 10-band k{center_dot}p model. Postgrowth annealing under arsine-H{sub 2} with a N{sub 2} cooldown was found to increase the low temperature PL intensity and result in the appearance of luminescence at room temperature.
- OSTI ID:
- 20787725
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 12; Other Information: DOI: 10.1063/1.2148620; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANNEALING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
HYDROGEN
LAYERS
NITROGEN
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SIMULATION
SUBSTRATES
SUPERLATTICES
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K
THICKNESS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION