Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Journal Article · Thu Dec 15 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2148620· OSTI ID:20787725

Khandekar, A A; Hawkins, B E; Kuech, T F; Yeh, J Y; Mawst, L J; Meyer, J R; Vurgaftman, I; Tansu, N ^[1]

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1. Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)

Pseudomorphic four-period GaAs{sub 0.978}N{sub 0.022}/GaAs{sub 0.78}Sb{sub 0.22} type-II multiquantum well structures were grown on (100) GaAs substrates by metalorganic vapor phase epitaxy at 530 deg. C. The GaAs{sub 0.978}N{sub 0.022} layers were grown at a V/III ratio of 685 and N/V ratio of 0.96, whereas the GaAs{sub 0.78}Sb{sub 0.22} was grown at a V/III ratio of 3.8 and Sb/V ratio of 0.8. The superlattice peaks in the x-ray diffraction {theta}-2{theta} scans around the (400) GaAs peak were fitted using a dynamical simulation model to determine layer thickness and alloy compositions. The GaAsN and GaAsSb thicknesses were {approx}8 nm and {approx}5 nm, respectively. The photoluminescence (PL) spectra were obtained at 30 K and the PL peak energy was found to match the type-II transition energy obtained from a 10-band k{center_dot}p model. Postgrowth annealing under arsine-H{sub 2} with a N{sub 2} cooldown was found to increase the low temperature PL intensity and result in the appearance of luminescence at room temperature.

• OSTI ID: 20787725
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 12; Other Information: DOI: 10.1063/1.2148620; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
HYDROGEN
LAYERS
NITROGEN
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SIMULATION
SUBSTRATES
SUPERLATTICES
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K
THICKNESS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION