Electron beam control rf discharges for plasma processing
- Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering
Reactive Ion Etching (RIE) discharges for microelectronics fabrication suffer from the inability to separately control plasma density and ion power flux to the wafer. Inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) reactors have been developed to provide some degree of independent control. This is accomplished by arranging for ionization to be provided dominantly by the applied electromagnetic instead of the rf bias to the substrate. Both ICP and ECR reactors, though, optimally operate at low gas pressures, and are not typically used for intermediate to high pressure etching and deposition systems. To address the higher pressure range, a hybrid electron beam/RIE discharge system (EB-RIE) has been developed. In the EB-RIE system, a planar electron beam (1--3 kV) is injected into the plasma chamber above and parallel to the wafer. An rf bias is separately applied to the substrate. A 2-dimensional model of the EB-RIE reactor has been developed to investigate the scaling of the device and analyze previous experimental measurements. Results from the model are discussed for Ar and Ar/SiH{sub 4} gas mixtures in which the beam energy, gas pressure and positioning of the beam are varied.
- OSTI ID:
- 163159
- Report Number(s):
- CONF-950612-; ISBN 0-7803-2669-5; TRN: IM9604%%263
- Resource Relation:
- Conference: 22. international conference on plasma science, Madison, WI (United States), 5-8 Jun 1995; Other Information: PBD: 1995; Related Information: Is Part Of IEEE conference record -- abstracts: 1995 IEEE international conference on plasma science; PB: 312 p.
- Country of Publication:
- United States
- Language:
- English
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