Highly Sensitive Phototransistors Based on Two-Dimensional GaTe Nanosheets with Direct Bandgap

Journal Article · Wed Jan 01 00:00:00 EST 2014 · Nano Research

DOI:https://doi.org/10.1007/s12274-014-0430-2· OSTI ID:1130835

Hu, Prof Pingan ^[1]; Zhang, Jia ^[1]; Yoon, Mina ^[2]; Feng, Wei ^[1]; Tan, Pingheng ^[3]; Zheng, Wei ^[1]; Jingjing, Liu ^[1]; Wang, Xiaona ^[1]; Idrobo Tapia, Juan C ^[2]; Geohegan, David B ^[2]; Xiao, Kai ^[2]

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1. Harbin Institute of Technology
2. ORNL
3. Chinese Academy of Sciences (CAS), Institute of Semiconductors

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Laboratory Directed Research and Development (LDRD) Program
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1130835
• Journal Information: Nano Research, Vol. 7, Issue 5; ISSN 1998-0124
• Publisher: Springer
• Country of Publication: United States
• Language: English