A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Zou, Chen; Xi, Yuyin; Huang, Chun‐Ying; Keeler, Ethan G.; Feng, Tianyu; Zhu, Shihao; Pozzo, Lilo D.; Lin, Lih Y.

doi:10.1002/adom.201800324

Title: A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Journal Article · Sun May 06 00:00:00 EDT 2018 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.201800324· OSTI ID:1436195

^[1];

^[2]; Huang, Chun‐Ying ^[3]; Keeler, Ethan G. ^[1]; Feng, Tianyu ^[4]; Zhu, Shihao ^[4]; Pozzo, Lilo D. ^[2];

^[1]

Department of Electrical Engineering University of Washington Seattle WA 98195 USA
Department of Chemical Engineering University of Washington Seattle WA 98195 USA
Department of Electrical Engineering University of Washington Seattle WA 98195 USA, Department of Applied Materials and Optoelectronic Engineering National Chi Nan University NanTou 54561 Taiwan
Department of Physics University of Washington Seattle WA 98195 USA

Abstract All‐inorganic perovskite quantum dots (IPQDs) are a promising material for use in various optoelectronic devices due to their excellent optoelectronic properties and high environmental stability. Here, a high‐performance phototransistor based on a layered heterojunction composed of CsPbI ₃ QDs and a narrow‐bandgap conjugated polymer DPP‐DTT is reported, which shows a high responsivity of 110 A W ⁻¹ , a specific detectivity of 2.9 × 10 ¹³ Jones and a light to dark current ratio up to 6 × 10 ³ . The heterojunction phototransistor exhibits unipolar p‐type and gate bias modulated behaviors. In addition, the device exhibits a broad spectral detection range from ultraviolet to near infrared. The high sensitivity of the device is attributed to the layered heterojunction and the gate bias modulation property. The work overcomes the existing limitations in sensitivity of IPQD photodetectors due to the poor charge transport between QDs. The convenient solution‐processed fabrication and excellent device performance especially suggest the IPQD/narrow‐bandgap conjugate polymer heterojunction as a promising structure for potential applications of ultrasensitive broadband photodetectors compatible with a wide variety of substrates.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐SC0010282

OSTI ID:: 1436195

Journal Information:: Advanced Optical Materials, Journal Name: Advanced Optical Materials Vol. 6 Journal Issue: 14; ISSN 2195-1071

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 40 works

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