Correlating dislocation structures to basal and prismatic slip bands near grain boundaries in tensile-tested Mg–4Al using a multiscale electron microscopy approach
Abstract
Dislocation structures where basal and prismatic slip bands meet grain boundaries in tensile-tested Mg with 4 wt% Al (Mg–4Al) were studied using a multiscale electron microscopy approach to explore the assumptions made for the dislocation pileup theory: a) slip bands consist of dislocation arrays piling up near grain boundaries, and b) stress concentration in the adjacent grain is solely caused by dislocation pileup. After post-testing electron backscatter diffraction (EBSD) scans, focused-ion-beam (FIB) lift-out specimens were prepared from regions of interest so that the specimen plane is parallel to the bulk sample surface to allow for direct correlation between mesoscale and microscale characterization. High dislocation density and the dislocation arrays in the slip bands corroborated with the first assumption. Evidence of plastic deformation in all grains, however, showed that the second assumption was false. Additionally, dislocation structures including crystal rotation boundaries and dislocations dissociating to the basal plane provide additional stress relief mechanisms near grain boundaries that are not accounted for in many crystal plasticity models, which requires auxiliary models to more accurately predict the stress and strain distribution in a microstructure.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States)
- Publication Date:
- Research Org.:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1977467
- Alternate Identifier(s):
- OSTI ID: 1856049
- Grant/Contract Number:
- SC0008637
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
- Additional Journal Information:
- Journal Volume: 840; Journal Issue: C; Journal ID: ISSN 0921-5093
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Science & Technology; Materials science; Metallurgy & Metallurgical Engineering; Mg; Basal slip; Nonbasal slip; EBSD; TEM; Hall-petch
Citation Formats
Yoo, Yung Suk Jeremy, Andani, Mohsen Taheri, and Misra, Amit. Correlating dislocation structures to basal and prismatic slip bands near grain boundaries in tensile-tested Mg–4Al using a multiscale electron microscopy approach. United States: N. p., 2022.
Web. doi:10.1016/j.msea.2022.142993.
Yoo, Yung Suk Jeremy, Andani, Mohsen Taheri, & Misra, Amit. Correlating dislocation structures to basal and prismatic slip bands near grain boundaries in tensile-tested Mg–4Al using a multiscale electron microscopy approach. United States. https://doi.org/10.1016/j.msea.2022.142993
Yoo, Yung Suk Jeremy, Andani, Mohsen Taheri, and Misra, Amit. Fri .
"Correlating dislocation structures to basal and prismatic slip bands near grain boundaries in tensile-tested Mg–4Al using a multiscale electron microscopy approach". United States. https://doi.org/10.1016/j.msea.2022.142993. https://www.osti.gov/servlets/purl/1977467.
@article{osti_1977467,
title = {Correlating dislocation structures to basal and prismatic slip bands near grain boundaries in tensile-tested Mg–4Al using a multiscale electron microscopy approach},
author = {Yoo, Yung Suk Jeremy and Andani, Mohsen Taheri and Misra, Amit},
abstractNote = {Dislocation structures where basal and prismatic slip bands meet grain boundaries in tensile-tested Mg with 4 wt% Al (Mg–4Al) were studied using a multiscale electron microscopy approach to explore the assumptions made for the dislocation pileup theory: a) slip bands consist of dislocation arrays piling up near grain boundaries, and b) stress concentration in the adjacent grain is solely caused by dislocation pileup. After post-testing electron backscatter diffraction (EBSD) scans, focused-ion-beam (FIB) lift-out specimens were prepared from regions of interest so that the specimen plane is parallel to the bulk sample surface to allow for direct correlation between mesoscale and microscale characterization. High dislocation density and the dislocation arrays in the slip bands corroborated with the first assumption. Evidence of plastic deformation in all grains, however, showed that the second assumption was false. Additionally, dislocation structures including crystal rotation boundaries and dislocations dissociating to the basal plane provide additional stress relief mechanisms near grain boundaries that are not accounted for in many crystal plasticity models, which requires auxiliary models to more accurately predict the stress and strain distribution in a microstructure.},
doi = {10.1016/j.msea.2022.142993},
journal = {Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing},
number = C,
volume = 840,
place = {United States},
year = {Fri Mar 18 00:00:00 EDT 2022},
month = {Fri Mar 18 00:00:00 EDT 2022}
}
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