Charge Separation in Monolayer WSe2 by Strain Engineering: Implications for Strain-Induced Diode Action
Abstract
Strain-engineering band structure in transition-metal dichalcogenides (TMDC) is a promising avenue toward capabilities in optoelectronics. For example, controlling the flow of optically generated quasiparticles can be achieved by a localized strain field which reduces the bandgap and generates an energy-band gradient that funnels neutral excitons to the strain apex. It would be even more advantageous to mimic a diode’s internal field, where both conduction and valence bands bend in the same direction, to separate electrons and holes. This can be achieved if the strain in the TMDC layer lowers both the conduction band minimum as well as the valence band maximum during strain-induced band narrowing. Here, we have used density functional theory (DFT) calculations of monolayer WSe2 electronic structure under biaxial strain to show that WSe2 has this property. In this work, to test the band bending experimentally, we combined localized strain with electrostatic doping to follow photoluminescence from excitons and positive or negative trions. In unstrained WSe2, both positive and negative trion emissions dominate over excitons away from charge neutrality. In contrast, for strained areas, negative trions accumulate, while positive trion emission is near zero away from charge neutrality, indicating a lack of holes. Hence, strain bends both conductionmore »
- Authors:
-
[1];
[2];
[1];
- Boston Univ., MA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1896992
- Grant/Contract Number:
- AC05-00OR22725; SC0021064; 1945364
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Nano Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2574-0970
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 2D materials; transition metal dichalcogenides (TMDCs); strain engineering; electrostatic-gating; exciton funneling; charge separation
Citation Formats
Chen, Zhuofa, Luo, Weijun, Liang, Liangbo, Ling, Xi, and Swan, Anna K. Charge Separation in Monolayer WSe2 by Strain Engineering: Implications for Strain-Induced Diode Action. United States: N. p., 2022.
Web. doi:10.1021/acsanm.2c03264.
Chen, Zhuofa, Luo, Weijun, Liang, Liangbo, Ling, Xi, & Swan, Anna K. Charge Separation in Monolayer WSe2 by Strain Engineering: Implications for Strain-Induced Diode Action. United States. https://doi.org/10.1021/acsanm.2c03264
Chen, Zhuofa, Luo, Weijun, Liang, Liangbo, Ling, Xi, and Swan, Anna K. Mon .
"Charge Separation in Monolayer WSe2 by Strain Engineering: Implications for Strain-Induced Diode Action". United States. https://doi.org/10.1021/acsanm.2c03264. https://www.osti.gov/servlets/purl/1896992.
@article{osti_1896992,
title = {Charge Separation in Monolayer WSe2 by Strain Engineering: Implications for Strain-Induced Diode Action},
author = {Chen, Zhuofa and Luo, Weijun and Liang, Liangbo and Ling, Xi and Swan, Anna K.},
abstractNote = {Strain-engineering band structure in transition-metal dichalcogenides (TMDC) is a promising avenue toward capabilities in optoelectronics. For example, controlling the flow of optically generated quasiparticles can be achieved by a localized strain field which reduces the bandgap and generates an energy-band gradient that funnels neutral excitons to the strain apex. It would be even more advantageous to mimic a diode’s internal field, where both conduction and valence bands bend in the same direction, to separate electrons and holes. This can be achieved if the strain in the TMDC layer lowers both the conduction band minimum as well as the valence band maximum during strain-induced band narrowing. Here, we have used density functional theory (DFT) calculations of monolayer WSe2 electronic structure under biaxial strain to show that WSe2 has this property. In this work, to test the band bending experimentally, we combined localized strain with electrostatic doping to follow photoluminescence from excitons and positive or negative trions. In unstrained WSe2, both positive and negative trion emissions dominate over excitons away from charge neutrality. In contrast, for strained areas, negative trions accumulate, while positive trion emission is near zero away from charge neutrality, indicating a lack of holes. Hence, strain bends both conduction and valence bands down, similarly to the band bending in a PN-diode depletion region, providing an opportunity to separate electrons and holes via localized strain.},
doi = {10.1021/acsanm.2c03264},
journal = {ACS Applied Nano Materials},
number = 10,
volume = 5,
place = {United States},
year = {Mon Oct 03 00:00:00 EDT 2022},
month = {Mon Oct 03 00:00:00 EDT 2022}
}
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