Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures

Davis, Samuel Kenneth; Huang, Zhen; Han, Kun; Ariando, None; Venkatesan, Thirumalai; Chandrasekhar, Venkat

doi:10.1002/admi.201600830

Title: Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO₃/SrTiO₃ Interface Structures

Abstract

The two dimensional conducting gas that forms at the interface between the two insulators LaAlO₃ (LAO) and SrTiO₃ (STO)1, 2 has garnered a lot of attention due to wide variety of physical phenomena that it exhibits, including strong spin–orbit coupling,3, 4 superconductivity,5-8 magnetism,7-12 and localization effects,13 among others. From the earliest studies,1 it has been well established that the conditions during film growth or the post-growth treatment of samples can have a substantial effect on the properties of the interface. In particular, the amount of oxygen vacancies introduced during growth or through post-growth treatment can change the conductance of the LAO/STO interface by orders of magnitude.2, 13-17 Experiments on bulk STO18 samples and STO films19 indicate that the enhanced conduction induced by oxygen vacancies is associated with defect states introduced in the band gap of the STO at the interface, adding donor levels close to the STO conduction band edge, and acceptor levels near the valence band.18, 19 All of these earlier studies were performed on samples grown in the (001) crystal orientation. Here we report studies of the effects of various post-growth treatments on the transport properties of (111) oriented LAO/STO interface structures, which have been shown to exhibitmore »« less

Authors:

Davis, Samuel Kenneth ^[1]; Huang, Zhen ^[2]; Han, Kun ^[2]; Ariando, None ^[2]; Venkatesan, Thirumalai ^[2]; Chandrasekhar, Venkat ^[1]

Northwestern Univ., Evanston, IL (United States)
National Univ. of Singapore (Singapore)

Publication Date:: Fri Dec 02 00:00:00 EST 2016

Research Org.:: Northwestern Univ., Evanston, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1533048

Alternate Identifier(s):: OSTI ID: 1401725

Grant/Contract Number:: FG02-06ER46346; DEFG02-06ER46346

Resource Type:: Accepted Manuscript

Journal Name:: Advanced Materials Interfaces

Additional Journal Information:: Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2196-7350

Publisher:: Wiley-VCH

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; chemistry; materials science; anisotropy; LAO/STO; oxygen vacancies

Citation Formats


                    Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando, None, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures.  United States: N. p., 2016. 
Web.  doi:10.1002/admi.201600830.

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                    Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando, None, Venkatesan, Thirumalai, & Chandrasekhar, Venkat. Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures.  United States.  https://doi.org/10.1002/admi.201600830

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                    Davis, Samuel Kenneth, Huang, Zhen, Han, Kun, Ariando, None, Venkatesan, Thirumalai, and Chandrasekhar, Venkat. Fri .  
"Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures".  United States.  https://doi.org/10.1002/admi.201600830.  https://www.osti.gov/servlets/purl/1533048.

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@article{osti_1533048,

  title        = {Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures},

  author       = {Davis, Samuel Kenneth and Huang, Zhen and Han, Kun and Ariando, None and Venkatesan, Thirumalai and Chandrasekhar, Venkat},

  abstractNote = {The two dimensional conducting gas that forms at the interface between the two insulators LaAlO3 (LAO) and SrTiO3 (STO)1, 2 has garnered a lot of attention due to wide variety of physical phenomena that it exhibits, including strong spin–orbit coupling,3, 4 superconductivity,5-8 magnetism,7-12 and localization effects,13 among others. From the earliest studies,1 it has been well established that the conditions during film growth or the post-growth treatment of samples can have a substantial effect on the properties of the interface. In particular, the amount of oxygen vacancies introduced during growth or through post-growth treatment can change the conductance of the LAO/STO interface by orders of magnitude.2, 13-17 Experiments on bulk STO18 samples and STO films19 indicate that the enhanced conduction induced by oxygen vacancies is associated with defect states introduced in the band gap of the STO at the interface, adding donor levels close to the STO conduction band edge, and acceptor levels near the valence band.18, 19 All of these earlier studies were performed on samples grown in the (001) crystal orientation. Here we report studies of the effects of various post-growth treatments on the transport properties of (111) oriented LAO/STO interface structures, which have been shown to exhibit a strong anisotropy of their properties along different crystal directions.20 As with the (001) samples, we find that the presence of oxygen vacancies increases the conductance of the interface, but at the same time also substantially decreases the anisotropy. This suggests that the defect states introduced by oxygen vacancies contribute isotropically to charge transport, partially masking the strongly anisotropic contribution of the intrinsic bands. In addition, our work shows that one can reversibly tune the transport properties of LAO/STO interface samples by applying appropriate post-growth treatment.},

  doi          = {10.1002/admi.201600830},

  journal      = {Advanced Materials Interfaces},

  number       = 3,

  volume       = 4,

  place        = {United States},

  year         = {Fri Dec 02 00:00:00 EST 2016},

  month        = {Fri Dec 02 00:00:00 EST 2016}

}

Copy to clipboard

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Works referencing / citing this record:

Electrostatic tuning of magnetism at the conducting (111) (La _0.3 Sr _0.7 )(Al _0.65 Ta _0.35 )/SrTiO ₃ interface
journal, August 2017

Bal, V. V.; Huang, Z.; Han, K.
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Photoresponsive properties at (0 0 1), (1 1 1) and (1 1 0) LaAlO ₃ /SrTiO ₃ interfaces
journal, December 2019

Yan, Hong; Zhang, Zhaoting; Li, Ming
Journal of Physics: Condensed Matter, Vol. 32, Issue 13
DOI: 10.1088/1361-648x/ab5ebf

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Similar Records

Title: Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures

Abstract

Citation Formats

Blue-light emission at room temperature from Ar+-irradiated SrTiO3 journal, October 2005

Giant spin splitting of the two-dimensional electron gas at the surface of SrTiO3 journal, October 2014

High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces journal, October 2012

Magnetic effects at the interface between non-magnetic oxides journal, June 2007

Evidence for charge–vortex duality at the LaAlO3/SrTiO3 interface journal, January 2012

The Origin of Oxygen Vacancies Controlling La 2/3 Sr 1/3 MnO 3 Electronic and Magnetic Properties journal, January 2016

Anisotropic two-dimensional electron gas at the LaAlO3/SrTiO3 (110) interface journal, May 2013

Ferromagnetic exchange, spin–orbit coupling and spiral magnetism at the LaAlO3/SrTiO3 interface journal, August 2013

Structure-Property Relation of SrTiO3/LaAlO3 Interfaces journal, May 2009

Electronic phase separation at the LaAlO3/SrTiO3 interface journal, February 2011

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface journal, January 2004

Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures journal, September 2006

Superconducting Interfaces Between Insulating Oxides journal, August 2007

Gate Tunable In- and Out-of-Plane Spin-Orbit Coupling and Spin-Splitting Anisotropy at LaAlO 3 /SrTiO 3 (110) Interface journal, June 2015

Coexistence of Superconductivity and Ferromagnetism in Two Dimensions journal, July 2011

Antisymmetric magnetoresistance of the SrTiO 3 / LaAlO 3 interface journal, November 2009

Charge localization or itineracy at LaAlO3∕SrTiO3 interfaces Hole polarons, oxygen vacancies, and mobile electrons journal, July 2006

Localization of two-dimensional electron gas in LaAlO 3 /SrTiO 3 heterostructures journal, April 2012

Effect of oxygen vacancies in the SrTiO 3 substrate on the electrical properties of the LaAlO 3 ∕ SrTiO 3 interface journal, March 2007

Control of a Two-Dimensional Electron Gas on SrTiO 3 ( 111 ) by Atomic Oxygen journal, October 2014

Orientational Tuning of the Fermi Sea of Confined Electrons at the SrTiO 3 (110) and (111) Surfaces journal, June 2014

Structure-Property Relation of SrTiO3-LaAlO3 Interfaces preprint, January 2008

Coexistence of superconductivity and ferromagnetism in two dimensions text, January 2011

Electrostatic tuning of magnetism at the conducting (111) (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )/SrTiO 3 interface journal, August 2017

Photoresponsive properties at (0 0 1), (1 1 1) and (1 1 0) LaAlO 3 /SrTiO 3 interfaces journal, December 2019

Title: Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO₃/SrTiO₃ Interface Structures

Blue-light emission at room temperature from Ar+-irradiated SrTiO3
journal, October 2005

Giant spin splitting of the two-dimensional electron gas at the surface of SrTiO3
journal, October 2014

High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
journal, October 2012

Magnetic effects at the interface between non-magnetic oxides
journal, June 2007

Evidence for charge–vortex duality at the LaAlO3/SrTiO3 interface
journal, January 2012

The Origin of Oxygen Vacancies Controlling La _2/3 Sr _1/3 MnO ₃ Electronic and Magnetic Properties
journal, January 2016

Anisotropic two-dimensional electron gas at the LaAlO3/SrTiO3 (110) interface
journal, May 2013

Ferromagnetic exchange, spin–orbit coupling and spiral magnetism at the LaAlO3/SrTiO3 interface
journal, August 2013

Structure-Property Relation of SrTiO₃/LaAlO₃ Interfaces
journal, May 2009

Electronic phase separation at the LaAlO3/SrTiO3 interface
journal, February 2011

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
journal, January 2004

Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures
journal, September 2006

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

Gate Tunable In- and Out-of-Plane Spin-Orbit Coupling and Spin-Splitting Anisotropy at LaAlO ₃ /SrTiO ₃ (110) Interface
journal, June 2015

Coexistence of Superconductivity and Ferromagnetism in Two Dimensions
journal, July 2011

Antisymmetric magnetoresistance of the ${SrTiO}_{3} / {LaAlO}_{3}$ interface
journal, November 2009

Charge localization or itineracy at $La Al O_{3} ∕ Sr Ti O_{3}$ interfaces Hole polarons, oxygen vacancies, and mobile electrons
journal, July 2006

Localization of two-dimensional electron gas in LaAlO $_{3}$ /SrTiO $_{3}$ heterostructures
journal, April 2012

Effect of oxygen vacancies in the ${SrTiO}_{3}$ substrate on the electrical properties of the ${LaAlO}_{3} ∕ {SrTiO}_{3}$ interface
journal, March 2007

Control of a Two-Dimensional Electron Gas on ${SrTiO}_{3} (111)$ by Atomic Oxygen
journal, October 2014

Orientational Tuning of the Fermi Sea of Confined Electrons at the ${SrTiO}_{3}$ (110) and (111) Surfaces
journal, June 2014

Structure-Property Relation of SrTiO3-LaAlO3 Interfaces
preprint, January 2008

Coexistence of superconductivity and ferromagnetism in two dimensions
text, January 2011

Electrostatic tuning of magnetism at the conducting (111) (La _0.3 Sr _0.7 )(Al _0.65 Ta _0.35 )/SrTiO ₃ interface
journal, August 2017

Photoresponsive properties at (0 0 1), (1 1 1) and (1 1 0) LaAlO ₃ /SrTiO ₃ interfaces
journal, December 2019