Phonon interaction with ripples and defects in thin layered molybdenum disulfide
Abstract
Compared to other extrinsic phonon scattering mechanisms such as surface and interior defects, phonon scattering and lattice thermal resistance due to structural rippling in few-layer two-dimensional (2D) materials are under-examined. Here, the temperature-dependent basal-plane thermal conductivities (κ) of one rippled and four flat molybdenum disulfide (MoS2) samples are measured using a four-probe thermal transport measurement method. A flat 18 nm thick sample and a rippled 20 nm thick sample show similar peak κ values of 122 ± 17 and 129 ± 19 W m–1 K–1, respectively. In comparison, a 32 nm thick flat sample has a peak κ value of only 58 ± 11 W m–1 K–1 despite having an increased thickness. The peak thermal conductivities of the five samples decrease with increasing integrated Raman intensity caused by defects in the frequency range of the phonon bandgap in MoS2. In conjunction with the experimental findings, theoretical calculations of the temperature-, thickness-, strain-, and defect-dependent κ of thin MoS2 layers reveal the importance of interior defect scattering over scattering from compression-induced ripples and surface defects in these samples. Furthermore, the results further clarify the conditions where ripples are important in determining the basal plane thermal resistance in layered systems.
- Authors:
-
[1];
[2];
[1];
[1];
[1];
[1]
- University of Texas at Austin, TX (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); University of Texas at Austin, TX (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
- OSTI Identifier:
- 1524885
- Alternate Identifier(s):
- OSTI ID: 1854547; OSTI ID: 1996992
- Grant/Contract Number:
- AC05-00OR22725; FG02-07ER46377
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 22; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; Thermal conductivity, Two-dimensional Material, Transition Metal Dichalcogenide,
Citation Formats
Smith, Brandon, Lindsay, Lucas R., Kim, Jaehyun, Ou, Eric, Huang, Rui, and Shi, Li. Phonon interaction with ripples and defects in thin layered molybdenum disulfide. United States: N. p., 2019.
Web. doi:10.1063/1.5099103.
Smith, Brandon, Lindsay, Lucas R., Kim, Jaehyun, Ou, Eric, Huang, Rui, & Shi, Li. Phonon interaction with ripples and defects in thin layered molybdenum disulfide. United States. https://doi.org/10.1063/1.5099103
Smith, Brandon, Lindsay, Lucas R., Kim, Jaehyun, Ou, Eric, Huang, Rui, and Shi, Li. Mon .
"Phonon interaction with ripples and defects in thin layered molybdenum disulfide". United States. https://doi.org/10.1063/1.5099103. https://www.osti.gov/servlets/purl/1524885.
@article{osti_1524885,
title = {Phonon interaction with ripples and defects in thin layered molybdenum disulfide},
author = {Smith, Brandon and Lindsay, Lucas R. and Kim, Jaehyun and Ou, Eric and Huang, Rui and Shi, Li},
abstractNote = {Compared to other extrinsic phonon scattering mechanisms such as surface and interior defects, phonon scattering and lattice thermal resistance due to structural rippling in few-layer two-dimensional (2D) materials are under-examined. Here, the temperature-dependent basal-plane thermal conductivities (κ) of one rippled and four flat molybdenum disulfide (MoS2) samples are measured using a four-probe thermal transport measurement method. A flat 18 nm thick sample and a rippled 20 nm thick sample show similar peak κ values of 122 ± 17 and 129 ± 19 W m–1 K–1, respectively. In comparison, a 32 nm thick flat sample has a peak κ value of only 58 ± 11 W m–1 K–1 despite having an increased thickness. The peak thermal conductivities of the five samples decrease with increasing integrated Raman intensity caused by defects in the frequency range of the phonon bandgap in MoS2. In conjunction with the experimental findings, theoretical calculations of the temperature-, thickness-, strain-, and defect-dependent κ of thin MoS2 layers reveal the importance of interior defect scattering over scattering from compression-induced ripples and surface defects in these samples. Furthermore, the results further clarify the conditions where ripples are important in determining the basal plane thermal resistance in layered systems.},
doi = {10.1063/1.5099103},
journal = {Applied Physics Letters},
number = 22,
volume = 114,
place = {United States},
year = {Mon Jun 03 00:00:00 EDT 2019},
month = {Mon Jun 03 00:00:00 EDT 2019}
}
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