High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
Abstract
This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9-μm-thick drift layer exhibited a high breakdown voltage (Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mQ · cm2 (or 0.70 mQ · cm2 with current spreading considered) and a high Baliga's figure-of-merit (V $$2\atop{bd}$$/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (~106 times at -300 V) and a huge enhancement in V bd (from ~300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of ~2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of -109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.
- Authors:
-
- Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
- Publication Date:
- Research Org.:
- Arizona State Univ., Tempe, AZ (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1505564
- Grant/Contract Number:
- AR0000868
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Electron Device Letters
- Additional Journal Information:
- Journal Volume: 39; Journal Issue: 7; Journal ID: ISSN 0741-3106
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE; Gallium nitride; wide bandgap semiconductor; p-n diodes; power electronics; breakdown; edge termination
Citation Formats
Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, and Zhao, Yuji. High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination. United States: N. p., 2018.
Web. doi:10.1109/LED.2018.2837625.
Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, & Zhao, Yuji. High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination. United States. https://doi.org/10.1109/LED.2018.2837625
Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, and Zhao, Yuji. Wed .
"High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination". United States. https://doi.org/10.1109/LED.2018.2837625. https://www.osti.gov/servlets/purl/1505564.
@article{osti_1505564,
title = {High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination},
author = {Fu, Houqiang and Fu, Kai and Huang, Xuanqi and Chen, Hong and Baranowski, Izak and Yang, Tsung-Han and Montes, Jossue and Zhao, Yuji},
abstractNote = {This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9-μm-thick drift layer exhibited a high breakdown voltage (Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mQ · cm2 (or 0.70 mQ · cm2 with current spreading considered) and a high Baliga's figure-of-merit (V $2\atop{bd}$/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (~106 times at -300 V) and a huge enhancement in V bd (from ~300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of ~2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of -109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.},
doi = {10.1109/LED.2018.2837625},
journal = {IEEE Electron Device Letters},
number = 7,
volume = 39,
place = {United States},
year = {Wed May 16 00:00:00 EDT 2018},
month = {Wed May 16 00:00:00 EDT 2018}
}
Web of Science
Works referencing / citing this record:
Dopant profiling in p-i-n GaN structures using secondary electrons
journal, July 2019
- Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai
- Journal of Applied Physics, Vol. 126, Issue 1